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1

Electrical properties of Mg-doped GaN and AlxGa1–xN

Tatiana A. Komissarova, Valentin N. Jmerik, Andrey M. Mizerov, Nataliya M. Shmidt, Boris Ya. Ber, Dmitry Yu. Kasantsev, Sergey V. Ivanov

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 246 KB

english, 2009

2

MBE-grown fluoride/GaAs(111)B heterostructures: control of interfacial barrier by Eu and Sm insulator doping

V.V. Afanas'ev, M.N. Mizerov, S.V. Novikov, N.S. Sokolov

Journal:

Applied Surface Science

Année:

1992

Langue:

english

Fichier:

PDF, 268 KB

english, 1992

3

InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range

Sergey V. Ivanov, Valentin N. Jmerik, Tatiana V. Shubina, Svyatoslav B. Listoshin, Andrey M. Mizerov, Alla A. Sitnikova, Min-Ho Kim, Masayoshi Koike, Bum-Joon Kim, Pyotr S. Kop’ev

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 284 KB

english, 2007

4

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

V.N. Jmerik, A.M. Mizerov, T.V. Shubina, M. Yagovkina, V.B. Listoshin, A.A. Sitnikova, S.V. Ivanov, M.-H. Kim, M. Koike, B.-J. Kim

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 269 KB

english, 2007

5

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V.N. Jmerik, T.V. Shubina, A.M. Mizerov, K.G. Belyaev, A.V. Sakharov, M.V. Zamoryanskaya, A.A. Sitnikova, V.Yu. Davydov, P.S. Kop’ev, E.V. Lutsenko, N.V. Rzheutskii, A.V. Danilchik, G.P. Yablonskii, S

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 323 KB

english, 2009

6

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

A.M. Mizerov, V.N. Jmerik, M.A. Yagovkina, S.I. Troshkov, P.S. Kop'ev, S.V. Ivanov

Journal:

Journal of Crystal Growth

Année:

2011

Langue:

english

Fichier:

PDF, 758 KB

english, 2011

7

Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. A. Toropov, K. G. Belyaev, A. A. Sitnikova, M. A. Yagovkina, P. S. Kop'ev, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, G. P. Yablonskii, B. Monema

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 560 KB

english, 2010

8

Electrical properties and optical absorption in InN:In structures

T. A. Komissarova, D. S. Plotnikov, V. N. Jmerik, T. V. Shubina, A. M. Mizerov, A. N. Semenov, S. V. Ivanov, L. I. Ryabova, D. R. Khokhlov

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 161 KB

english, 2008

9

Growth kinetics of AlxGa1–xN layers (0 < x < 1) in plasma-assisted molecular beam epitaxy

A. M. Mizerov, V. N. Jmerik, P. S. Kop'ev, S. V. Ivanov

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 222 KB

english, 2010

10

On multiple transitivity for products of sets of permutations

Journal:

Journal of Mathematical Sciences

Année:

2008

Langue:

english

Fichier:

PDF, 207 KB

english, 2008

11

Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, D. S. Plotnikov, M. V. Zamoryanskaya, M. A. Yagovkina, Ya. V. Domracheva, A. A. Sitnikova, S. V. Ivanov

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 364 KB

english, 2008

12

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. V. Sakharov, A. A. Sitnikova, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, G. P. Yablonskii

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 298 KB

english, 2008

13

Features of molecular beam epitaxy of the GaN (0001) and GaN (000( ar 1 )) layers with the use of different methods of activation of nitrogen

A. M. Mizerov, V. N. Jmerik, V. K. Kaibyshev, T. A. Komissarova, S. A. Masalov, S. V. Ivanov

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 226 KB

english, 2009

14

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber, D. Yu. Kazantsev, M. N. Mizerov, Hee Seok Park, M. Hytch, F. Hue

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 211 KB

english, 2010

15

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy

A. L. Zakgeim, G. L. Kuryshev, M. N. Mizerov, V. G. Polovinkin, I. V. Rozhansky, A. E. Chernyakov

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 298 KB

english, 2010

16

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, M. A. Synitsin, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 155 KB

english, 2010

17

Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, S. B. Listoshin, S. V. Ivanov

Journal:

Technical Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 204 KB

english, 2007

18

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov, N. A. Cherkashin, M. Hytch

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 672 KB

english, 2012

19

Monolithic white LEDs: Approaches, technology, design

Ustinov, V. M., Tsatsulnikov, A. F., Lundin, V. V., Sakharov, A. V., Nikolaev, A. E., Zavarin, E. E., Zakgeim, A. L., Chernyakov, A. E., Mizerov, M. N., Cherkashin, N. A., Hytch, M.

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Année:

2012

Langue:

english

Fichier:

PDF, 397 KB

english, 2012

20

Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold

M. R. Ainbund, A. N. Alekseev, O. V. Alymov, V. N. Jmerik, L. V. Lapushkina, A. M. Mizerov, S. V. Ivanov, A. V. Pashuk, S. I. Petrov

Journal:

Technical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 239 KB

english, 2012

21

RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures

D. V. Nechaev, V. N. Jmerik, A. M. Mizerov, P. S. Kop’ev, S. V. Ivanov

Journal:

Technical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 145 KB

english, 2012

22

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

V.N. Jmerik, A.M. Mizerov, D.V. Nechaev, P.A. Aseev, A.A. Sitnikova, S.I. Troshkov, P.S. Kop'ev, S.V. Ivanov

Journal:

Journal of Crystal Growth

Année:

2012

Langue:

english

Fichier:

PDF, 762 KB

english, 2012

23

AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

V. I. Vasil’ev, G. S. Gagis, R. V. Lyovin, B. V. Pushnyi, A. G. Deryagin, V. I. Kuchinskii, M. N. Mizerov

Journal:

Technical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 142 KB

english, 2012

24

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

Shevchenko, E. A., Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Ivanov, S. V., Toropov, A. A.

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 314 KB

english, 2012

25

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 518 KB

english, 2012

26

Phase separation in In x Ga 1-x N (0.10 < x < 0.40)

Belyaev, K. G., Rakhlin, M. V., Jmerik, V. N., Mizerov, A. M., Kuznetsova, Ya. V., Zamoryanskaya, M. V., Ivanov, S. V., Toropov, A. A.

Journal:

physica status solidi (c)

Année:

2013

Langue:

english

Fichier:

PDF, 427 KB

english, 2013

27

Fabrication and study ofp-nstructures with crystalline inclusions in the space-charge region

Kalinovsky, V. S., Levin, R. V., Pushniy, B. V., Mizerov, M. N., Rumyantsev, V. D., Andreev, V. M.

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 391 KB

english, 2013

28

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Kop’ev, P. S., Ivanov, S. V., Lutsenko, E. V., Tarasuk, N. P., Rzheutskii, N. V., Yablonskii, G. P.

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 393 KB

english, 2010

29

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Mizerov, A. M., Kladko, P. N., Nikitina, E. V., Egorov, A. Yu.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 623 KB

english, 2015

30

MOVPE of III-N LED structures with short technological process

Lundin, W. V., Davydov, D. V., Zavarin, E. E., Popov, M. G., Sakharov, A. V., Yakovlev, E. V., Bazarevskii, D. S., Talalaev, R. A., Tsatsulnikov, A. F., Mizerov, M. N., Ustinov, V. M.

Journal:

Technical Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 176 KB

english, 2015

31

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures

Levin, R. V., Marichev, A. E., Shvarts, M. Z., Marukhina, E. P., Khvostikov, V. P., Pushnyi, B. V., Mizerov, M. N., Andreev, V. M.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 272 KB

english, 2015

32

[IEEE 2015 IEEE 15th International Conference on Environment and Electrical Engineering (EEEIC) - Rome, Italy (2015.6.10-2015.6.13)] 2015 IEEE 15th International Conference on Environment and Electrical Engineering (EEEIC) - Research perspectives of the influence of lighting modes on changes of human functional state by means of “smart lighting”

Berlov, D.N., Baranova, T.I., Bisegna, F., Pavlova, L.P., Aladov, A.V., Zakgeim, A.L., Mizerov, M.N., Chiligina, Y.A.

Année:

2015

Langue:

english

Fichier:

PDF, 346 KB

english, 2015

33

Semiconductor lasers with the light output through the diffraction grating on the surface of the waveguide layer

Alferov, Z.H., Andreyev, V., Gurevich, S., Kazarinov, R., Larionov, V., Mizerov, M., Portnoy, E.

Journal:

IEEE Journal of Quantum Electronics

Année:

1975

Langue:

english

Fichier:

PDF, 360 KB

english, 1975

34

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V.

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 436 KB

english, 2016

35

InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition

Levin, R. V., Nevedomskii, V. N., Pushnyi, B. V., Bert, N. A., Mizerov, M. N.

Journal:

Technical Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 343 KB

english, 2016

36

The quantum-confined Stark effect and localization of charge carriers in Al x Ga 1-x N/Al y Ga 1-y N quantum wells with different morphologies

Shevchenko, E. A., Jmerik, V. N., Mizerov, A. M., Nechaev, D. V., Sitnikova, A. A., Ivanov, S. V., Toropov, A. A.

Journal:

physica status solidi (c)

Année:

2013

Langue:

english

Fichier:

PDF, 218 KB

english, 2013

37

[IEEE 2016 International Conference Laser Optics (LO) - Saint Petersburg, Russia (2016.6.27-2016.7.1)] 2016 International Conference Laser Optics (LO) - Spatial current density distribution of “vertical” and “face-up” high-power blue algainn LEDs

Aladov, A. V., Chernyakov, A. E., Zakgeim, A. L., Mizerov, M. N.

Année:

2016

Langue:

english

Fichier:

PDF, 200 KB

english, 2016

38

[IEEE 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) - Dresden, Germany (2017.4.3-2017.4.5)] 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) - Theoretical and experimental study of thermal resistance & temperature distribution in high-power AlGaInN LED arrays

Chernyakov, A.E., Aladov, A.V., Zakgeim, A.L., Mizerov, M.N., Ustinov, V.M., Kalashnikov, I.A., Gavrikov, A.A., Smirnov, V.I., Sergeev, V.A.

Année:

2017

Langue:

english

Fichier:

PDF, 9.04 MB

english, 2017

39

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Inhomogeneous InGaN and InN with In-enriched Nanostructures

Shubina, T. V., Ivanov, S. V., Jmerik, V. N., Mizerov, A. M., Leymarie, J., Vasson, A., Monemar, B., Kop’ev, P. S.

Année:

2007

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2007

40

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

Kukushkin, S.A., Mizerov, A.M., Osipov, A.V., Redkov, A.V., Timoshnev, S.N.

Journal:

Thin Solid Films

Année:

2017

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2017

41

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

Zolotukhin, D, Seredin, P, Lenshin, A, Goloshchapov, D, Mizerov, A

Journal:

Journal of Physics Conference Series

Année:

2017

Langue:

english

Fichier:

PDF, 540 KB

english, 2017

42

The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates

Shubina, K. Yu., Berezovskaya, T. N., Mokhov, D. V., Mizerov, A. M., Nikitina, E. V.

Journal:

Technical Physics Letters

Année:

2017

Langue:

english

Fichier:

PDF, 529 KB

english, 2017

43

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

Kukushkin, S A, Mizerov, A M, Osipov, A V, Redkov, A V, Telyatnik, R S, Timoshnev, S N

Journal:

Journal of Physics Conference Series

Année:

2017

Langue:

english

Fichier:

PDF, 506 KB

english, 2017

44

The effects of GaN nanocolumn arrays and thin Si x N y buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

Shubina, K Yu, Pirogov, E V, Mizerov, A M, Nikitina, E V, Bouravleuv, A D

Journal:

Journal of Physics Conference Series

Année:

2018

Langue:

english

Fichier:

PDF, 758 KB

english, 2018

45

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Timoshnev, S. N., Mizerov, A. M., Sobolev, M. S., Nikitina, E. V.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 700 KB

english, 2018

46

Separation of Ga-polar GaN layer from Si substrate by wet chemical etching

Shubina, K Yu, Berezovskaya, T N, Mokhov, D V, Mizerov, A M, Nikitina, E V

Journal:

Journal of Physics Conference Series

Année:

2017

Langue:

english

Fichier:

PDF, 543 KB

english, 2017

47

Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of In x Ga 1-x N/Si(111) heterostructures with nanocolumn morphology of thin film

Seredin, P.V., Goloshchapov, D.L., Lenshin, А.S., Mizerov, А.М., Zolotukhin, D.S.

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2018

Langue:

english

Fichier:

PDF, 2.49 MB

english, 2018

48

[IEEE 2018 International Conference Laser Optics (ICLO) - Saint Petersburg, Russia (2018.6.4-2018.6.8)] 2018 International Conference Laser Optics (ICLO) - Effect of annealing FIB-induced defects in GaAs/AlGaAs heterostructure

Levitskii, I.V., Mitrofanov, M.I., Voznyuk, G.V., Nikolaev, D.N., Mizerov, M.N., Evtikhiev, V.P.

Année:

2018

Langue:

english

Fichier:

PDF, 759 KB

english, 2018

49

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Mizerov, A. M., Timoshnev, S. N., Sobolev, M. S., Nikitina, E. V., Shubina, K. Yu., Berezovskaia, T. N., Shtrom, I. V., Bouravleuv, A. D.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 699 KB

english, 2018

50

The study of photoluminescence properties of AlGaAs/GaAs heterostructure after Ga+ focused ion beam etching

Voznyuk, G V, Levitskii, I V, Mitrofanov, M I, Mizerov, M N, Nikolaev, D N, Evtikhiev, V P

Journal:

Journal of Physics Conference Series

Année:

2018

Langue:

english

Fichier:

PDF, 900 KB

english, 2018